NTE Electronics 2376 overview
2376 is a transistor made by NTE Electronics. NTE Electronics Inc 2376 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):30 A, Drain-source On Resistance-Max:85 mΩ…
Product details
Manufactured byNTE Electronics
Product typeTransistor
DescriptionNTE Electronics Inc 2376 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:200 V, Number of Elements:1, Drain Current-Max (ID):30 A, Drain-source On Resistance-Max:85 mΩ
DescriptionNTE Electronics Inc 2376 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE,Number of Terminals:3,DS Breakdown Voltage-Min:200 V,Number of Elements:1,Drain Current-Max (ID):30 A,Drain-source On Resistance-Max:85 m?
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