NTE Electronics NTE2011 overview
NTE Electronics Inc NTE2011 Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):500 mA, Polarity/Channel Type:NPN, Surface ...
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Manufactured byNTE Electronics
Product groupModules
DescriptionNTE Electronics Inc NTE2011 Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):500 mA, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:16, Number of Elements:7, DC Current Gain-Min (hFE):1000
DescriptionIC; 50 V; 2 W; 0.25 us (Typ.); 0.25 us (Typ.); 16-Lead DIP
DescriptionNTE Electronics Inc NTE2011 Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):500 mA, Polarity/Channel Type:NPN, Surface Mount:NO, Configuration:COMPLEX, Number of Terminals:16, Number of Elements:7, DC Current Gain-Min (hFE):1000
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