NTE Electronics NTE3312 overview
NTE Electronics Inc NTE3312 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):8 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Confi...
Product details
Manufactured byNTE Electronics
Product groupModules
DescriptionNTE Electronics Inc NTE3312 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):8 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
DescriptionTransistor; Bipolar; 8 A; 1200 V; 100 W; + 20 V; 150 degC; 3 V (Typ.)
DescriptionNTE Electronics Inc NTE3312 IGBT, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):8 A, Polarity/Channel Type:N-CHANNEL, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
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