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Manufactured byNexperia
Product groupModules
DescriptionNexperia PSMN4R8-100PSE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:5 mΩ
DescriptionNexperia PSMN4R8-100PSE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:5 mΩ
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