Nexperia PSMN4R8-100BSE overview
PSMN4R8-100BSE is made by Nexperia. Nexperia PSMN4R8-100BSE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max…
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DescriptionNexperia PSMN4R8-100BSE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:4.8 mΩ
DescriptionNexperia PSMN4R8-100BSE Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:100 V, Number of Elements:1, Drain Current-Max (Abs) (ID):120 A, Drain Current-Max (ID):120 A, Drain-source On Resistance-Max:4.8 mΩ
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