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PMDPB58UPE

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Nexperia PMDPB58UPE

Nexperia PMDPB58UPE overview

Nexperia PMDPB58UPE Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, N...

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Part number or familyPMDPB58UPE
Product groupModules

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Manufactured byNexperia
Product groupModules
DescriptionNexperia PMDPB58UPE Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.6 A, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:20 Ω
DescriptionNexperia PMDPB58UPE Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (Abs) (ID):3.6 A, Drain Current-Max (ID):3.6 A, Drain-source On Resistance-Max:20 Ω

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