NXP Semiconductor BSS84,215 overview
NXP BSS84+215 Integrated Circuit, BSS84+215 NXP NXP Semiconductors BSS84, 215 Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface mou...
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Manufactured byNXP Semiconductor
Product groupModules
DescriptionNXP BSS84+215 Integrated Circuit, BSS84+215 NXP
DescriptionNXP Semiconductors BSS84, 215 Small Signal Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:50 V, Number of Elements:1, Drain Current-Max (Abs) (ID):130 mA, Drain Current-Max (ID):130 mA, Drain -source On Resistance-Max:10 Ω
DescriptionNEXPERIA/NXP/PHILIPS BSS84,215 DMOSFET P-ch 130mA 50V 250mW Rds=6Ω SOT23 RoHS
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| # | Name |
|---|---|
| 1 | BSS84215 |
| 2 | BSS84+215 |