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Manufactured byMotorola
Product groupModules
DescriptionMotorola Semiconductor Products MMBR5031LT1 Rf Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:10 V, Collector Current-Max (IC):20 mA, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):25, Transition Frequency-Nom (fT):1 GHz
DescriptionMotorola Mobility LLC MMBR5031LT1 Rf Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:10 V,Collector Current-Max (IC):20 mA,Polarity/Channel Type:NPN,Surface Mount:YES,Configuration:SINGLE,Number of Terminals:3,Highest Frequency Band:ULTRA HIGH FREQUENCY BAND,Number of Elements:1,DC Current Gain-Min (hFE):25,Transition Frequency-Nom (fT):1 GHz
DescriptionMotorola mΩbility LLC MMBR5031LT1 Rf Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:10 V, Collector Current-Max (IC):20 mΩ, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):25, Transition Frequency-Nom (fT):1 GHz
DescriptionMotorola Semiconductor Products MMBR5031LT1 Rf Small Signal Bipolar Transistor, Collector-Emitter Voltage-Max:10 V, Collector Current-Max (IC):20 mA, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:3, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):25, Transition Frequency-Nom (fT):1 GHz
Description (Existing)MOTOROLA MMBR5031LT1 NPN Silicon Transistor 17dB 450MHz 15V 20mA 0.3W SOT-23
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Motorola
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Modules
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