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2N5876

ST 2N5876 EPITAXIAL BASE TRANSISTORS 80V 4A TO-3 LEADED

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ST 2N5876 EPITAXIAL BASE TRANSISTORS 80V 4A TO-3 LEADED

Motorola 2N5876 overview

STMicroelectronics 2N5876 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):4, Transition Frequency-Nom (fT):4 mΩz S...

Manufactured byMotorola
Part number or family2N5876
Product groupModules

What is Motorola 2N5876?

ST 2N5876 EPITAXIAL BASE TRANSISTORS 80V 4A TO-3 LEADED. STMicroelectronics 2N5876 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):4, Transition Frequency-Nom (fT):4 mΩz S...

Product details

Manufactured byMotorola
Product groupModules
DescriptionSTMicroelectronics 2N5876 Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):10 A, Polarity/Channel Type:PNP, Surface mount:NO, Configuration:SINGLE, Number of Terminals:2, Number of Elements:1, DC Current Gain-Min (hFE):4, Transition Frequency-Nom (fT):4 mΩz
Description 1786358428ST 2N5876 EPITAXIAL BASE TRANSISTORS 80V 4A TO-3 LEADED
Description (Existing)MOTOROLA 2N5876 PNP TRANSISOR 150W 80V 4A TO-3 LEADED

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Manufactured by Motorola View Motorola profile View S&T profile View STMICROECTRONICS profile
Product group Modules Explore Modules
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