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Manufactured byMotorola
Product groupModules
DescriptionMotorola Mobility LLC MRF648 Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:16 V, Collector Current-Max (IC):11 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:4, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):20, Power Gain-Min (Gp):4.4 dB
DescriptionMotorola Mobility LLC MRF648 Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:16 V, Collector Current-Max (IC):11 A, Polarity/Channel Type:NPN, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:4, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):20, Power Gain-Min (Gp):4.4 dB
DescriptionMotorola mΩbility LLC MRF648 Rf Power Bipolar Transistor, Collector-Emitter Voltage-Max:16 V, Collector Current-Max (IC):11 A, Polarity/Channel Type:NPN, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, DC Current Gain-Min (hFE):20, Power Gain-Min (Gp):4.4 dB
DescriptionMOT MRF648 Integrated Circuit, MRF648 MOT
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