Product details
Manufactured byMotorola
Product groupModules
DescriptionMotorola Semiconductor Products MRF5035 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:36 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):15 A, Power Gain-Min (Gp):6.5 dB, Drain Current-Max (ID):15 A, Drain-source On Resistance-Max:140.7 mΩ
DescriptionMotorola Semiconductor Products MRF5035 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:4, DS Breakdown Voltage-Min:36 V, Highest Frequency Band:ULTRA HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):15 A, Power Gain-Min (Gp):6.5 dB, Drain Current-Max (ID):15 A, Drain-source On Resistance-Max:140.7 mΩ
DescriptionMOT MRF5035 Integrated Circuit, MRF5035 MOT
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