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Manufactured byMotorola
Product groupModules
DescriptionMotorola Mobility LLC MRF19120 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:2
DescriptionMotorola Mobility LLC MRF19120 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:2
DescriptionMotorola mΩbility LLC MRF19120 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:COMMON SOURCE, 2 ELEMENTS, Number of Terminals:4, DS Breakdown Voltage-Min:65 V, Highest Frequency Band:L BAND, Number of Elements:2
DescriptionMOT MRF19120 Integrated Circuit, MRF19120 MOT
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