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Manufactured byMotorola
Product groupModules
DescriptionMotorola Semiconductor Products MTE53N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:500 V, Number of Elements:1, Drain Current-Max (Abs) (ID):53 A, Drain Current-Max (ID):53 A, Drain-source On Resistance-Max:80 mΩ
DescriptionMotorola Semiconductor Products MTE53N50E Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):53 A,Drain Current-Max (ID):53 A,Drain-source On Resistance-Max:80 m?
DescriptionIGBT Modules
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