Mitsubishi MGF0915A-01 overview
Mitsubishi Electric MGF0915A-01 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:...
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Manufactured byMitsubishi
Product groupModules
DescriptionMitsubishi Electric MGF0915A-01 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:10 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):3 A, Drain Current-Max (ID):800 mΩ
DescriptionMITSUBISHI MGF0915A-01 SMD - P1DB = 36.5DBM, GLP = 14+36.5DBM
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