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RD30HVF1

Mitsubishi ยท Modules

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Mitsubishi RD30HVF1

Mitsubishi RD30HVF1 overview

Mitsubishi Electric RD30HVF1 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, ...

Manufactured byMitsubishi
Part number or familyRD30HVF1
Product groupModules

Product details

Manufactured byMitsubishi
Product groupModules
DescriptionMitsubishi Electric RD30HVF1 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:2, DS Breakdown Voltage-Min:30 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (ID):7 A
DescriptionMitsubishi RD30HVF1 Integrated Circuit

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Manufactured by Mitsubishi View Mitsubishi profile
Product group Modules Explore Modules Explore Integrated Circuits (ICs)
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