Mitsubishi RD12MVS1 overview
Mitsubishi Electric RD12MVS1 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, ...
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Manufactured byMitsubishi
Product groupModules
DescriptionMitsubishi Electric RD12MVS1 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:50 V, Highest Frequency Band:VERY HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):4 A, Drain Current-Max (ID):4 A
DescriptionMITSUBISHI QFN
DescriptionMITSUBISHI RD12MVS1 Integrated Circuit, SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR(VOLTAGE 5
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