Mitsubishi RD00HHS1-101 overview
Mitsubishi Electric RD00HHS1-101 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals...
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Manufactured byMitsubishi
Product groupModules
DescriptionMitsubishi Electric RD00HHS1-101 Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:30 V, Highest Frequency Band:HIGH FREQUENCY BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):200 mA, Drain Current-Max (ID):200 mΩ
DescriptionMITSUBISH RD00HHS1-101 Integrated Circuit, MITSUBISH SOD-89
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