Mitsubishi MGF0951P overview
Mitsubishi Electric MGF0951P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, ...
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Manufactured byMitsubishi
Product groupModules
DescriptionMitsubishi Electric MGF0951P Rf Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface mount:YES, Configuration:SINGLE, Number of Terminals:3, DS Breakdown Voltage-Min:10 V, Highest Frequency Band:S BAND, Number of Elements:1, Drain Current-Max (Abs) (ID):800 mA, Drain Current-Max (ID):200 mΩ
DescriptionMITSUBISH MGF0951P Integrated Circuit, MITSUBISH GF-55
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