Mitsubishi M2V64S40BTP-10 overview
64M bit Synchronous DRAM Mitsubishi Electric M2V64S40BTP-10 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3....
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Manufactured byMitsubishi
Product groupModules
Description64M bit Synchronous DRAM
DescriptionMitsubishi Electric M2V64S40BTP-10 Dram, Memory Density:67.1089 Mbit, Memory Width:16, Organization:4MX16, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:8 ns, Clock Frequency-Max (fCLK):100 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST
DescriptionMITSUBIS M2V64S40BTP-10 Integrated Circuit, MITSUBIS TSSOP54
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