MICRO-SEMI APT50M60JVR overview
Microsemi Corporation APT50M60JVR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):63 A,Drain Current-Max (ID):63 A,Drain-sou...
What is MICRO-SEMI APT50M60JVR?
Microsemi Corporation APT50M60JVR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):63 A,Drain Current-Max (ID):63 A,Drain-sou...
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Product groupModules
DescriptionMicrosemi Corporation APT50M60JVR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (Abs) (ID):63 A,Drain Current-Max (ID):63 A,Drain-source On Resistance-Max:60 m?
Description 1771325739MICROSEMI APT50M60JVR MOSFET N-CH 63A 500V SOT-227
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