MICRO-SEMI APT31N80JC3 overview
Microsemi Corporation APT31N80JC3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):31 A,Drain Current-Max (ID):31 A,Drain-sou...
What is MICRO-SEMI APT31N80JC3?
Microsemi Corporation APT31N80JC3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):31 A,Drain Current-Max (ID):31 A,Drain-sou...
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Product groupModules
DescriptionMicrosemi Corporation APT31N80JC3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (Abs) (ID):31 A,Drain Current-Max (ID):31 A,Drain-source On Resistance-Max:145 m?
Description 1771323607MICROSEMI APT31N80JC3 MOSFET N-CH 31A 800V SOT-227
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