MICRO-SEMI APT31N60BCSG overview
Microsemi Corporation APT31N60BCSG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):31 A,Drain Current-Max (ID):31 A,Drain-so...
What is MICRO-SEMI APT31N60BCSG?
Microsemi Corporation APT31N60BCSG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):31 A,Drain Current-Max (ID):31 A,Drain-so...
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DescriptionMicrosemi Corporation APT31N60BCSG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (Abs) (ID):31 A,Drain Current-Max (ID):31 A,Drain-source On Resistance-Max:100 m?
Description 1771323523MICROSEMI APT31N60BCSG MOSFET N-CH 31A 600V TO-247
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