MICRO-SEMI APT31M100B2 overview
Microsemi Corporation APT31M100B2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:1 kV,Number of Elements:1,Drain Current-Max (ID):32 A,Drain-source On Resistance-Max:380 m? MICROS...
What is MICRO-SEMI APT31M100B2?
Microsemi Corporation APT31M100B2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:1 kV,Number of Elements:1,Drain Current-Max (ID):32 A,Drain-source On Resistance-Max:380 m? MICROS...
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DescriptionMicrosemi Corporation APT31M100B2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:1 kV,Number of Elements:1,Drain Current-Max (ID):32 A,Drain-source On Resistance-Max:380 m?
Description 1771323437MICROSEMI APT31M100B2 MOSFET N-CH 31A 1000V T-MAX
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