MICRO-SEMI APT18M80B overview
Microsemi Corporation APT18M80B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (ID):19 A,Drain-source On Resistance-Max:530 m? MICROSE...
What is MICRO-SEMI APT18M80B?
Microsemi Corporation APT18M80B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (ID):19 A,Drain-source On Resistance-Max:530 m? MICROSE...
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DescriptionMicrosemi Corporation APT18M80B Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:800 V,Number of Elements:1,Drain Current-Max (ID):19 A,Drain-source On Resistance-Max:530 m?
Description 1771321376MICROSEMI APT18M80B MOSFET N-CH 18A 800V TO-247
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