MICRO-SEMI APL1001J overview
Microsemi Corporation APL1001J Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:1 kV,Number of Elements:1,Drain Current-Max (Abs) (ID):18 A,Drain Current-Max (ID):18 A,Drain-source ...
What is MICRO-SEMI APL1001J?
Microsemi Corporation APL1001J Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:1 kV,Number of Elements:1,Drain Current-Max (Abs) (ID):18 A,Drain Current-Max (ID):18 A,Drain-source ...
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DescriptionMicrosemi Corporation APL1001J Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:1 kV,Number of Elements:1,Drain Current-Max (Abs) (ID):18 A,Drain Current-Max (ID):18 A,Drain-source On Resistance-Max:600 m?
Description 1771261881MICROSEMI APL1001J MOSFET N-CH 18A 1000V SOT-227
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