MICRO-SEMI UPT8 overview
Microsemi Corporation UPT8 Transient Suppressor, Clamping Voltage-Max:13.7 V, Reverse Current-Max:2 µA, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Breakdown Voltage-Min:9 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES...
What is MICRO-SEMI UPT8?
MICROSEMI UPT8 Integrated Circuit, TvsarraySeries.... Microsemi Corporation UPT8 Transient Suppressor, Clamping Voltage-Max:13.7 V, Reverse Current-Max:2 µA, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Breakdown Voltage-Min:9 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES...
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Manufactured byMICRO-SEMI
Product groupModules
DescriptionMicrosemi Corporation UPT8 Transient Suppressor, Clamping Voltage-Max:13.7 V, Reverse Current-Max:2 µA, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Breakdown Voltage-Min:9 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:8 V, Number of Elements:1, Technology:AVALANCHE
Description 1771390902MICROSEMI UPT8 Integrated Circuit, TvsarraySeries
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