MICRO-SEMI UPT12 overview
Microsemi Corporation UPT12 Transient Suppressor, Clamping Voltage-Max:21.6 V, Reverse Current-Max:1 µA, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Breakdown Voltage-Min:13.8 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount...
What is MICRO-SEMI UPT12?
MICROSEMI UPT12 Integrated Circuit, TVSarraySeries.... Microsemi Corporation UPT12 Transient Suppressor, Clamping Voltage-Max:21.6 V, Reverse Current-Max:1 µA, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Breakdown Voltage-Min:13.8 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount...
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Manufactured byMICRO-SEMI
Product groupModules
DescriptionMicrosemi Corporation UPT12 Transient Suppressor, Clamping Voltage-Max:21.6 V, Reverse Current-Max:1 µA, Power Dissipation-Max:2.5 W, Diode Element Material:SILICON, Breakdown Voltage-Min:13.8 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:SINGLE, Surface Mount:YES, Rep Pk Reverse Voltage-Max:12 V, Number of Elements:1, Technology:AVALANCHE
Description 1771384565MICROSEMI UPT12 Integrated Circuit, TVSarraySeries
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