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ITZ35C12T

Microsemi ยท Modules

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Microsemi ITZ35C12T

Microsemi ITZ35C12T overview

Microsemi Corporation ITZ35C12T Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):65 A, Polarity/Channe...

Manufactured byMicrosemi
Part number or familyITZ35C12T
Product groupModules

Product details

Manufactured byMicrosemi
Product groupModules
DescriptionMicrosemi Corporation ITZ35C12T Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):65 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO

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Manufactured by Microsemi View Microsemi profile
Product group Modules Explore Modules Explore Transistor Explore IGBTs
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