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ITZ08C12P

Microsemi ยท Modules

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Microsemi ITZ08C12P

Microsemi ITZ08C12P overview

Microsemi Corporation ITZ08C12P Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):16 A, Polarity/Channe...

Manufactured byMicrosemi
Part number or familyITZ08C12P
Product groupModules

Product details

Manufactured byMicrosemi
Product groupModules
DescriptionMicrosemi Corporation ITZ08C12P Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:7.5 V, Collector Current-Max (IC):16 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO

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Manufactured by Microsemi View Microsemi profile
Product group Modules Explore Modules Explore Transistor Explore IGBTs
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