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ITH60C06P

Microsemi ยท Modules

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Microsemi ITH60C06P

Microsemi ITH60C06P overview

Microsemi Corporation ITH60C06P Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:2.7 V, Collector Current-Max (IC):75 A, Polarity/Channel...

Manufactured byMicrosemi
Part number or familyITH60C06P
Product groupModules

Product details

Manufactured byMicrosemi
Product groupModules
DescriptionMicrosemi Corporation ITH60C06P Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:2.7 V, Collector Current-Max (IC):75 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO

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Manufactured by Microsemi View Microsemi profile
Product group Modules Explore Modules Explore Transistor Explore IGBTs
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