Microsemi Corporation APTGT100DA170D1 overview
Microsemi Corporation APTGT100DA170D1 Igbt, Collector-Emitter Voltage-Max:1.7 kV, Collector Current-Max (IC):200 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:7, Number of Elements:1
What is Microsemi Corporation APTGT100DA170D1?
Microsemi Corporation APTGT100DA170D1 Igbt, Collector-Emitter Voltage-Max:1.7 kV, Collector Current-Max (IC):200 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:7, Number of Elements:1
Product details
Manufactured byMicrosemi Corporation
Product groupTransistors
DescriptionMicrosemi Corporation APTGT100DA170D1 Igbt, Collector-Emitter Voltage-Max:1.7 kV, Collector Current-Max (IC):200 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:7, Number of Elements:1
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