Microsemi APT80GP60B2G overview
Microsemi Corporation APT80GP60B2G Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):100 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:N...
Product details
Manufactured byMicrosemi
Product groupTransistor
DescriptionMicrosemi Corporation APT80GP60B2G Igbt, Collector-Emitter Voltage-Max:600 V, Collector Current-Max (IC):100 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
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