Microsemi APT50GP60B2DQ2 overview
Microsemi Corporation APT50GP60B2DQ2 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):150 A, Polarity/Cha...
Product details
Manufactured byMicrosemi
Product typeTransistor
DescriptionMicrosemi Corporation APT50GP60B2DQ2 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):150 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
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