Microsemi APT45GF60BN overview
Microsemi Corporation APT45GF60BN Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):45 A, Polarity/Channel...
Product details
Manufactured byMicrosemi
Product typeTransistor
DescriptionMicrosemi Corporation APT45GF60BN Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6 V, Collector Current-Max (IC):45 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
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