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APT35GN120S

Microsemi ยท Transistor

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Microsemi APT35GN120S

Microsemi APT35GN120S overview

APT35GN120S is a transistor made by Microsemi. Microsemi Corporation APT35GN120S Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):94 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES

Manufactured byMicrosemi
Part number or familyAPT35GN120S
Product typeTransistor

Product details

Manufactured byMicrosemi
Product typeTransistor
DescriptionMicrosemi Corporation APT35GN120S Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):94 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES

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Manufactured by Microsemi View Microsemi profile
Product type Transistor Explore Transistor Explore IGBTs
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