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APT33GF120B2RD

Microsemi ยท Modules

Microsemi APT33GF120B2RD

Microsemi APT33GF120B2RD overview

Microsemi Corporation APT33GF120B2RD Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):33 A, Polarity/C...

Manufactured byMicrosemi
Part number or familyAPT33GF120B2RD
Product groupModules

Product details

Manufactured byMicrosemi
Product groupModules
DescriptionMicrosemi Corporation APT33GF120B2RD Igbt, Collector-Emitter Voltage-Max:1.2 kV, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):33 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO

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