Microsemi APT30GN60SDQ2G overview
Microsemi Corporation APT30GN60SDQ2G Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):63 A, Polarity/Ch...
Product details
Manufactured byMicrosemi
Product typeTransistor
DescriptionMicrosemi Corporation APT30GN60SDQ2G Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):63 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES
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