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APT30GN60S

Microsemi ยท Modules

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Microsemi APT30GN60S

Microsemi APT30GN60S overview

Microsemi Corporation APT30GN60S Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):63 A, Polarity/Channe...

Manufactured byMicrosemi
Part number or familyAPT30GN60S
Product groupModules

Product details

Manufactured byMicrosemi
Product groupModules
DescriptionMicrosemi Corporation APT30GN60S Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):63 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES

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Manufactured by Microsemi View Microsemi profile
Product group Modules Explore Modules Explore Transistor Explore IGBTs
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