Microsemi APT25GN120BE3 overview
Microsemi Corporation APT25GN120BE3 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):67 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:...
Product details
Manufactured byMicrosemi
Product typeTransistor
DescriptionMicrosemi Corporation APT25GN120BE3 Igbt, Collector-Emitter Voltage-Max:1.2 kV, Collector Current-Max (IC):67 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1
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