Product details
Manufactured byMicrosemi
Product groupModules
DescriptionMicrosemi Corporation APT100GN60B2 Igbt, Collector-Emitter Voltage-Max:600 V, Gate-Emitter Thr Voltage-Max:6.5 V, Collector Current-Max (IC):229 A, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, Number of Elements:1
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Microsemi
View Microsemi profile
Available from
Sourcing support available
Start a sourcing request