Product details
Manufactured byMicron
Product groupModules
DescriptionMicron Technology Inc MT16LSDT3264AG-10E Dram, Memory Density:2.1475 Gbit, Memory Width:64, Organization:32MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):125 MHz, Refresh Cycles:4096
Description256MB (1 x 256MB) - 100MHz PC100 - SDRAM - 168-pin
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Micron
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| # | Name |
|---|---|
| 1 | MT16LSDT3264AG-10E |