Product details
Manufactured byMicron
Product groupModules
DescriptionMicron Technology Inc MTA4ATF51264HZ-3G2E1 Dram, Memory Density:34.3597 Gbit, Memory Width:64, Organization:512MX64, Supply Voltage-Nom (Vsup):1.2 V, Access Mode:SINGLE BANK PAGE BURST
DescriptionMICRON MTA4ATF51264HZ-3G2E1 Integrated Circuit, DRAM Module DDR4 SDRAM 4Gbyte 260SODIMM Tray
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Micron
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