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MT9HTF12872RHY-667E1

Micron ยท DRAM's

Micron MT9HTF12872RHY-667E1

Micron MT9HTF12872RHY-667E1 overview

Micron Technology Inc MT9HTF12872RHY-667E1 Dram, Memory Density:9.6637 Gbit, Memory Width:72, Organization:128MX72, Supply Voltage-Nom (Vsup):1.8 V, Power Suppl...

Manufactured byMicron
Part number or familyMT9HTF12872RHY-667E1
Product groupDRAM's

Product details

Manufactured byMicron
Product groupDRAM's
DescriptionMicron Technology Inc MT9HTF12872RHY-667E1 Dram, Memory Density:9.6637 Gbit, Memory Width:72, Organization:128MX72, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST

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Product group DRAM's Explore DRAM's Explore Memory
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