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MT4LSDT464LHG-10EC3

Micron ยท DRAM's

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Micron MT4LSDT464LHG-10EC3

Micron MT4LSDT464LHG-10EC3 overview

Micron Technology Inc MT4LSDT464LHG-10EC3 Dram, Memory Density:268.4355 Mbit, Memory Width:64, Organization:4MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Suppli...

Manufactured byMicron
Part number or familyMT4LSDT464LHG-10EC3
Product groupDRAM's

Product details

Manufactured byMicron
Product groupDRAM's
DescriptionMicron Technology Inc MT4LSDT464LHG-10EC3 Dram, Memory Density:268.4355 Mbit, Memory Width:64, Organization:4MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):125 MHz, Refresh Cycles:4096, Access Mode:FOUR BANK PAGE BURST

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Product group DRAM's Explore DRAM's Explore Memory
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