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MT4LG51264HG-10

Micron ยท DRAM's

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Micron MT4LG51264HG-10

Micron MT4LG51264HG-10 overview

Micron Technology Inc MT4LG51264HG-10 Dram, Memory Density:33.5544 Mbit, Memory Width:64, Organization:512KX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:...

Manufactured byMicron
Part number or familyMT4LG51264HG-10
Product groupDRAM's

Product details

Manufactured byMicron
Product groupDRAM's
DescriptionMicron Technology Inc MT4LG51264HG-10 Dram, Memory Density:33.5544 Mbit, Memory Width:64, Organization:512KX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6.5 ns, Clock Frequency-Max (fCLK):125 MHz, Refresh Cycles:1024, Access Mode:DUAL BANK PAGE BURST

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Product group DRAM's Explore DRAM's Explore Memory
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