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MT4HTF6464HY-53EXX

Micron ยท DRAM's

Micron MT4HTF6464HY-53EXX

Micron MT4HTF6464HY-53EXX overview

Micron Technology Inc MT4HTF6464HY-53EXX Dram, Memory Density:4.295 Gbit, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:500 ps, Access M...

Manufactured byMicron
Part number or familyMT4HTF6464HY-53EXX
Product groupDRAM's

Product details

Manufactured byMicron
Product groupDRAM's
DescriptionMicron Technology Inc MT4HTF6464HY-53EXX Dram, Memory Density:4.295 Gbit, Organization:64MX64, Supply Voltage-Nom (Vsup):1.8 V, Access Time-Max:500 ps, Access Mode:SINGLE BANK PAGE BURST

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Manufactured by Micron View Micron profile
Product group DRAM's Explore DRAM's Explore Memory
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