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MT4HTF1664AY-53EE1

Micron ยท DRAM's

Micron MT4HTF1664AY-53EE1

Micron MT4HTF1664AY-53EE1 overview

Micron Technology Inc MT4HTF1664AY-53EE1 Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies...

Manufactured byMicron
Part number or familyMT4HTF1664AY-53EE1
Product groupDRAM's

Product details

Manufactured byMicron
Product groupDRAM's
DescriptionMicron Technology Inc MT4HTF1664AY-53EE1 Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:500 ps, Clock Frequency-Max (fCLK):267 MHz, Refresh Cycles:8192

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Product group DRAM's Explore DRAM's Explore Memory
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