Micron Technology MT9HTF12872RHY-667E1 overview
Micron Technology Inc MT9HTF12872RHY-667E1 Dram, Memory Density:9.6637 Gbit, Memory Width:72, Organization:128MX72, Supply Voltage-Nom (Vsup):1.8 V, Power Suppl...
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Manufactured byMicron Technology
Product groupModules
DescriptionMicron Technology Inc MT9HTF12872RHY-667E1 Dram, Memory Density:9.6637 Gbit, Memory Width:72, Organization:128MX72, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST
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