Micron Technology MT4LSDT1664AY-10E overview
Micron Technology Inc MT4LSDT1664AY-10E Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:...
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Manufactured byMicron Technology
Product groupModules
DescriptionMicron Technology Inc MT4LSDT1664AY-10E Dram, Memory Density:1.0737 Gbit, Memory Width:64, Organization:16MX64, Supply Voltage-Nom (Vsup):3.3 V, Power Supplies:3.3 V, Access Time-Max:6 ns, Clock Frequency-Max (fCLK):125 MHz, Refresh Cycles:8192
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