Micron Technology EDE1104AASE-6E-E overview
Micron Technology Inc EDE1104AASE-6E-E Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1....
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Manufactured byMicron Technology
Product groupModules
DescriptionMicron Technology Inc EDE1104AASE-6E-E Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:450 ps, Clock Frequency-Max (fCLK):333 MHz, Refresh Cycles:8192
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